ASint DDR3 Unbuffered SO-DIMM ASint DDR3 Unbuffered SO-DIMM Ordering Information ASint DDR3 Unbuffered SO-DIMM v0.1 – NDA Required 6 2008©昱聯科技股份有限公司 ASint Technology Corp. Electrical Specifications • All voltages are referenced to VSS (GND). Absolute Maximum Ratings Parameter Symbol Value Unit Notes
1Gb: x4, x8, x16 DDR3 SDRAM - Micron Technology, Inc. - Micron Technology, Inc. DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks Features •V DD = V DDQ = 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe •8n-bit prefetch ...
2Gb: x4, x8, x16 DDR3 SDRAM (pdf) - Micron 2011年11月11日 - DDR3 SDRAM. MT41J512M4 – 64 Meg x 4 x 8 Banks. MT41J256M8 – 32 Meg x 8 x 8 ...
2Gb: x16 DDR3 SDRAM Reduced tFAW Addendum (pdf) - Micron DDR3 SDRAM Reduced tFAW Addendum. MT41J128M16 – 16 Meg x 16 x 8 Banks. Features.
DDR3 SDRAM Device Operation - SK hynix Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and ...
4Gb: x4, x8, x16 DDR3 SDRAM - Micron 2011年11月11日 - DDR3 SDRAM. MT41J1G4 – 128 Meg ... 4Gb_DDR3_SDRAM.pdf - Rev. N 12/14 EN. 1.
1Gb: x4, x8, x16 DDR3 SDRAM Addendum - Micron DDR3 SDRAM Data Sheet Addendum ... 1Gb_ddr3_sdram_addendum.pdf - Rev. B 03/14 EN. 1.
4Gb: x16 DDR3 SDRAM Reduced tFAW Addendum (pdf) - Micron DDR3 SDRAM Reduced tFAW Addendum. MT41J256M16 – 32 Meg x 16 x 8 Banks. Features.
Micron Technology, Inc. - MT41J256M16HA-093 行動版 - User's Manual: New Features of DDR3 SDRAM (pdf) This manual is intended for users who design ...
W631GG6KB 8M × 8 BANKS × 16 BIT DDR3 SDRAM - Winbond 8M × 8 BANKS × 16 BIT DDR3 SDRAM. Publication Release Date: Dec. 08, 2014 . Revision: A06. - 1 -.